Dubon-Chevallier, C. : rechercher sur Z-Library

Le plus grand référentiel d'articles scientifiques au monde. 70,000,000+ d'articles gratuitement.

Don't use scam websites

Livres
Articles (33)
Les plus populaires
Liste
- Liste
- Tableau

1

Verification of on-wafer noise parameter measurements

Boudiaf, A., Dubon-Chevallier, C., Pasquet, D.

Journal:

IEEE Transactions on Instrumentation and Measurement

Année:

1995

Langue:

english

Fichier:

PDF, 303 KB

english, 1995

2

[IEEE Conference on Precision Electromagnetic Measurements Digest - Boulder, CO, USA (27 June-1 July 1994)] Proceedings of Conference on Precision Electromagnetic Measurements Digest - An original passive device for on-wafer noise parameter measurement verification

Boudiaf, A., Dubon-Chevallier, C., Pasquet, D.

Année:

1994

Langue:

english

Fichier:

PDF, 166 KB

english, 1994

3

A new GaAs/Ga1−xAlxAs superlattice transistor grown by molecular beam epitaxy

F. Alexandre, J.C. Harmand, J.L. Lievin, C. Dubon-Chevallier, D. Ankri, C. Minot, J.F. Palmier

Journal:

Journal of Crystal Growth

Année:

1987

Langue:

english

Fichier:

PDF, 397 KB

english, 1987

4

Carbon doping of GaAs for heterojunction bipolar transistors: a comparison between MBE and CBE

J.L. Benchimol, F. Alexandre, N. Jourdan, A.M. Pougnet, R. Mellet, B. Sermage, F. Héliot, C. Dubon-Chevallier

Journal:

Journal of Crystal Growth

Année:

1993

Langue:

english

Fichier:

PDF, 345 KB

english, 1993

5

Modern epitaxial techniques for HBT structures

F Alexandre, J.L Benchimol, P Launay, J Dangla, C Dubon-Chevallier

Journal:

Solid-State Electronics

Année:

1995

Langue:

english

Fichier:

PDF, 893 KB

english, 1995

6

(NH4)2Sx passivation treatment and UVCVD stabilisation for GaInP/GaAs heterojunction bipolar transistors

H. Sik, M. Riet, C. Dubon-Chevallier, B. Sermage

Journal:

Microelectronic Engineering

Année:

1994

Langue:

english

Fichier:

PDF, 358 KB

english, 1994

7

Correlated use of characterization techniques to optimize the Mg implantation annealing for self-aligned HBT's

V. Amarger, C. Dubon-Chevallier, A.C. Papadopoulo, B. Descouts, Y. Gao

Journal:

Applied Surface Science

Année:

1991

Langue:

english

Fichier:

PDF, 275 KB

english, 1991

8

Perpendicular transport in superlattice bipolar transistors (SBT)

A. Sibille, J.F. Palmier, C. Minot, J.C. Harmand, C. Dubon-Chevallier

Journal:

Superlattices and Microstructures

Année:

1987

Langue:

english

Fichier:

PDF, 448 KB

english, 1987

9

Fabrication and d.c. characterization of GaAlAs/GaAs double heterojunction bipolar transistors

A. Marty, J. Jamai, J.P. Vannel, N. Fabre, J.P. Bailbe, N. Duhamel, C. Dubon-Chevallier, J. Tasselli

Journal:

Solid-State Electronics

Année:

1988

Langue:

english

Fichier:

PDF, 756 KB

english, 1988

10

Heavily doped GaAs(Be)/GaAlAs HBTs grown by MBE with high device performances and high thermal stability

Jourdan, N., Alexandre, F., Dubon-Chevallier, C., Dangla, J., Gao, Y.

Journal:

IEEE Transactions on Electron Devices

Année:

1992

Langue:

english

Fichier:

PDF, 443 KB

english, 1992

11

Excess noise in AlGaAs/GaAs heterojunction bipolar transistors and associated TLM test structures

Delseny, C., Pascal, F., Jarrix, S., Lecoy, G., Dangla, J., Dubon-Chevallier, C.

Journal:

IEEE Transactions on Electron Devices

Année:

1994

Langue:

english

Fichier:

PDF, 641 KB

english, 1994

12

GaAs/GaAlAs Heterojunction Bipolar Phototransistor for Monolithic Photoreceiver Operating at 140 Mbit/s

Wang, H., Bacot, C., Gerard, C., Lievin, J.L., Dubon-Chevallier, C., Ankri, D., Scavennec, A.

Journal:

IEEE Transactions on Microwave Theory and Techniques

Année:

1986

Langue:

english

Fichier:

PDF, 757 KB

english, 1986

13

[IEEE 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium - San Diego, CA, USA (22-25 May 1994)] Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium - HBT MMICs for L band mobile radiocommunications

Plouchart, J.O., Wang, H., Pinatel, C., Riet, M., Berdaguer, P., Dubon-Chevallier, C.

Année:

1994

Langue:

english

Fichier:

PDF, 405 KB

english, 1994

14

Observation of Bloch conduction perpendicular to interfaces in a superlattice bipolar transistor

Palmier, J. F., Minot, C., Lievin, J. L., Alexandre, F., Harmand, J. C., Dangla, J., Dubon-Chevallier, C., Ankri, D.

Journal:

Applied Physics Letters

Année:

1986

Langue:

english

Fichier:

PDF, 435 KB

english, 1986

15

[IEEE IEEE NTC '95 The Microwave Systems Conference. Conference - Orlando, FL, USA (17-19 May 1995)] IEEE NTC,Conference Proceedings Microwave Systems Conference - Over-temperature noise modeling of PHEMTs

Boudiaf, A., Dubon-Chevallier, C.

Année:

1995

Langue:

english

Fichier:

PDF, 211 KB

english, 1995

16

Interactions between implanted Mg and base p-type dopant (Be,Zn,C) in heterojunction bipolar transistor devices

Amarger, V., Dubon-Chevallier, C., Gao, Y., Descouts, B.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 673 KB

english, 1992

17

Characterization of AlGaAs/GaAs heterojunction bipolar transistors and circuits by localized filtered low-temperature cathodoluminescence

Dubon-Chevallier, C., Papadopoulo, A. C., Bresse, J. F., Duchenois, A. M.

Journal:

Journal of Applied Physics

Année:

1989

Langue:

english

Fichier:

PDF, 828 KB

english, 1989

18

Comprehensive study of AuMn p-type ohmic contact for GaAs/GaAlAs heterojunction bipolar transistors

Dubon-Chevallier, C., Gauneau, M., Bresse, J. F., Izrael, A., Ankri, D.

Journal:

Journal of Applied Physics

Année:

1986

Langue:

english

Fichier:

PDF, 613 KB

english, 1986

19

Be diffusion mechanisms in InGaAs during post-growth annealing

Koumetz, S., Marcon, J., Ketata, K., Ketata, M., Dubon-Chevallier, C., Launay, P., Benchimol, J. L.

Journal:

Applied Physics Letters

Année:

1995

Langue:

english

Fichier:

PDF, 337 KB

english, 1995

20

Cathodoluminescence study of the damage induced by low-energy boron implantation using a chemical bevel

Papadopoulo, A. C., Dubon-Chevallier, C., Pougnet, A. M., Krauz, P.

Journal:

Applied Physics Letters

Année:

1990

Langue:

english

Fichier:

PDF, 447 KB

english, 1990

21

Model verification for a high-power-efficiency AlGaAs-GaAs HBT

Deshours, F., Bergeault, E., Berghoff, G., Pinatel, C., Dubon-Chevallier, C.

Journal:

IEEE Microwave and Guided Wave Letters

Année:

1996

Langue:

english

Fichier:

PDF, 295 KB

english, 1996

22

High doping level by rapid thermal annealing of Mg-implanted GaAs/GaAlAs for heterojunction bipolar transistors

Daoud-Ketata, K., Dubon-Chevallier, C., Besombes, C.

Journal:

IEEE Electron Device Letters

Année:

1987

Langue:

english

Fichier:

PDF, 322 KB

english, 1987

23

GeMoW Refractory Ohmic Contact for GaAs∕GaAlAs Self-Aligned Heterojunction Bipolar Transistors

Dubon-Chevallier, C.

Journal:

Journal of The Electrochemical Society

Année:

1990

Langue:

english

Fichier:

PDF, 707 KB

english, 1990

24

Molybdenum germanide ohmic contact to n -GaAs

Daoud-Ketata, K., Dubon-Chevallier, C., Besombes, C., Bresse, J.F., Henoc, P.

Journal:

Electronics Letters

Année:

1987

Langue:

english

Fichier:

PDF, 372 KB

english, 1987

25

Stability of highly Be-doped GaAs/GaInP HBTs grown by chemical beam epitaxy

Dangla, J., Benchimol, J.L., Alexandre, F., Sik, H., Dubon-Chevallier, C.

Journal:

Electronics Letters

Année:

1993

Langue:

english

Fichier:

PDF, 450 KB

english, 1993

26

Electrical characterisation of the p-type dopant diffusion of highly doped AlGaAs/GaAs heterojunction bipolar transistors grown by MOCVD

Dangla, J., Dubon-Chevallier, C., Filoche, M., Azoulay, R.

Journal:

Electronics Letters

Année:

1990

Langue:

english

Fichier:

PDF, 546 KB

english, 1990

27

Deposition and etching of refractory ohmic contacts to GaAs for self-aligned technology

Ketata, M, Ketata, K, Dubon-Chevallier, C, Debrie, R

Journal:

Journal of Physics D Applied Physics

Année:

1993

Langue:

english

Fichier:

PDF, 463 KB

english, 1993

28

[IEEE IEEE/MTT-S International Microwave Symposium - MTT '94 - San Diego, CA, USA (23-27 May 1994)] 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4) - HBT MMICs for L band mobile radiocommunications

Plouchart, J.O., Wang, H., Pinatel, C., Riet, M., Berdaguer, P., Dubon-Chevallier, C.

Année:

1994

Langue:

english

Fichier:

PDF, 368 KB

english, 1994

29

Investigation of emitter current crowding effect in heterojunction bipolar transistors

Fournier, V., Dangla, J., Dubon-Chevallier, C.

Journal:

Electronics Letters

Année:

1993

Langue:

english

Fichier:

PDF, 244 KB

english, 1993

30

ChemInform Abstract: GeMoW Refractory Ohmic Contact for GaAs/GaAlAs Self-Aligned Heterojunction Bipolar Transistors.

DUBON-CHEVALLIER, C., BLANCONNIER, P., BESOMBES, C., MAYEUX, C., BRESSE, J. F., HENOC, P., GAO, Y.

Journal:

Année:

1990

Fichier:

PDF, 155 KB

1990

31

Reproducible low-resistivity AuMn ohmic contact for p-type GaAs

Dubon-Chevallier, C., Duchenois, A.M., Bresse, J.F., Ankri, D.

Journal:

Electronics Letters

Année:

1985

Langue:

english

Fichier:

PDF, 266 KB

english, 1985

32

Very high gain in carbon-doped base heterojunction bipolar transistor grown by chemical beam epitaxy

Benchimol, J.L., Alexandre, F., Dubon-Chevallier, C., Héliot, F., Bourguiga, R., Dangla, J., Sermage, B.

Journal:

Electronics Letters

Année:

1992

Langue:

english

Fichier:

PDF, 225 KB

english, 1992

33

[AIP Noise in physical systems and 1/ - St. Louis, Missouri (USA) (1993)] AIP Conference Proceedings - Low-frequency noise measurements in GaAlAs/GaAs heterojunction bipolar transistors

Pascal, F., Jarrix, S., Delseny, C., Lecoy, G., Dubon-Chevallier, C., Dangla, J., Wang, H.

Année:

1993

Langue:

english

Fichier:

PDF, 443 KB

english, 1993